The Japanese electronics industry is one of the largest consumer electronics industries in the world. With a large revenue share, demand for semiconductors is high and GaN power devices being compact, efficient and with low capacitance, result in minimising energy losses during charging and discharging. This is likely to encourage demand in the market and subsequently drive overall market growth.
GaN is widely used in transistors and due to its enhanced properties such as high thermal conductivity, high voltage potential and large critical fields, these devices offer high switching frequencies and high power density enabling transistors to operate at high voltage levels. These transistors have applications in various fields and provide good results, which is another factor driving market growth.
For instance, in Jan 2016, Fujitsu Limited, which is a Japan based IT equipment manufacturing company, developed a GaN high-electron mobility transistor power amplifier with the world’s highest output performance for wideband wireless transmissions, which was 1.8X greater than before, enabling over 30% greater range for a high-speed wireless network.
Increasing research and development initiatives in GaN substrate is also responsible for the growth of the Japan GaN power devices market. Due to features of GaN technology such as high breakdown voltage, high switching frequency and miniaturisation, demand for GaN power devices has been increasing and continuous research is being done by research centres in Japan in order to determine and increase efficiencies of GaN.
For example, a few years ago, a team of researchers from the Institute of Industrial Science at the University of Tokyo developed a new technology for creating GaN LEDs on the glass substrate. With the help of this development, manufacturing costs can be cut down along with actualising OLED light panels.
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One of the factors hampering the growth of the Gallium Nitride power devices market is the shrinking path of semiconductor power devices. With increasing high current density in GaN devices, problems related to existing assembly and interconnect technologies are increasing. The major problems include low impedance interconnects, higher thermal resistance and lower thermal capacitance per chip demanding higher chip temperature and better thermal interconnects.
The need to handle higher current densities per package and the same heat flow coming from smaller footprints to be removed from the ambient environment is also growing. These factors continue to remain a challenge for the GaN power devices market in Japan.
In terms of value, the Japan GaN power devices market registered a CAGR of 17.8% from 2012–2016 and is expected to exhibit a CAGR of 23.1% from 2017–2027. In 2017, the Japan GaN power devices market is expected to be valued at more than US$ 100 Mn and is projected to reach more than US$ 800 Mn by the end of 2027. The GaN power devices market in Japan is expected to represent incremental opportunity of a little more than US$ 700 Mn between 2017 and 2027.
The Japan regional market is projected to be the most attractive market in the global GaN power devices market during the forecast period in terms of value. However, in terms of year on year growth, the Latin America GaN power devices market will register high Y-o-Y growth rates throughout the forecast period.
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The global GaN power is expected to display a CAGR of 24% during the forecast period
The global GaN power devices market is projected to secure US$ 1.88 Billion in 2022
The known players in the global GaN power devices market include Cree, Inc., GaN Systems, Qorvo, Inc., and Toshiba Corporation, among others.
1. Executive Summary 1.1. Market Overview 1.2. Market Analysis 1.3. FMI Analysis and Recommendations 2. Market Introduction 2.1. Market Taxonomy 2.2. Market Definition 3. Market View Point 3.1. Macro-Economic Factors 3.2. Opportunity Analysis 4. Global Market Analysis 2012–2016 and Forecast 2017–2027 4.1. Market Volume Projections 4.2. Market Size and Y-o-Y Growth 4.3. Absolute $ Opportunity 4.4. Value Chain 5. North America GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027 5.1. Introduction 5.2. Regional Market Dynamics 5.2.1. Drivers 5.2.2. Restraints 5.2.3. Trends 5.3. Market Size –Value (US$ Mn) By Country, 2012-2016 5.3.1. U.S. 5.3.2. Canada 5.4. Market Size - Value (US$ Mn) and Forecast By Country, 2017-2027 5.4.1. U.S. 5.4.2. Canada 5.5. Market Size - Value (US$ Mn) and Forecast By Technology 5.5.1. 4H SiC MOSFET 5.5.2. HEMT 5.5.3. Others 5.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material 5.6.1. GaN SiC 5.6.2. GaN Si 5.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size 5.7.1. Less than 150 mm 5.7.2. 150 mm-500 mm 5.7.3. More than 500 mm 5.8. Market Size –Value (US$ Mn) and Forecast By Industry 5.8.1. Consumer Electronics 5.8.2. Energy & Utilities 5.8.3. Automotive 5.8.4. IT & Telecom 5.8.5. Others 5.9. Drivers and Restraints: Impact Analysis 5.10. Market Attractiveness Analysis 5.10.1. By Country 5.10.2. By Technology 5.10.3. By Wafer Material 5.10.4. By Wafer Size 5.10.5. By Industry 5.11. Key Representative Market Participants 5.12. Market Presence (Intensity Map) 6. Western Europe GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027 6.1. Introduction 6.2. Regional Market Dynamics 6.2.1. Drivers 6.2.2. Restraints 6.2.3. Trends 6.3. Market Size –Value (US$ Mn) By Country, 2012-2016 6.3.1. Germany 6.3.2. France 6.3.3. U.K. 6.3.4. Spain 6.3.5. Italy 6.3.6. BENELUX 6.3.7. Nordic 6.3.8. Rest of Western Europe 6.4. Market Size –Value (US$ Mn) and Forecast By Country, 2017-2027 6.4.1. Germany 6.4.2. France 6.4.3. U.K. 6.4.4. Spain 6.4.5. Italy 6.4.6. BENELUX 6.4.7. Nordic 6.4.8. Rest of Western Europe 6.5. Market Size - Value (US$ Mn) and Forecast By Technology 6.5.1. 4H SiC MOSFET 6.5.2. HEMT 6.5.3. Others 6.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material 6.6.1. GaN SiC 6.6.2. GaN Si 6.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size 6.7.1. Less than 150 mm 6.7.2. 150 mm-500 mm 6.7.3. More than 500 mm 6.8. Market Size –Value (US$ Mn) and Forecast By Industry 6.8.1. Consumer Electronics 6.8.2. Energy & Utilities 6.8.3. Automotive 6.8.4. IT & Telecom 6.8.5. Others 6.9. Drivers and Restraints: Impact Analysis 6.10. Market Attractiveness Analysis 6.10.1. By Country 6.10.2. By Technology 6.10.3. By Wafer Material 6.10.4. By Wafer Size 6.10.5. By Industry 6.11. Key Representative Market Participants 6.12. Market Presence (Intensity Map) 7. Eastern Europe GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027 7.1. Introduction 7.2. Regional Market Dynamics 7.2.1. Drivers 7.2.2. Restraints 7.2.3. Trends 7.3. Market Size –Value (US$ Mn) By Country, 2012-2016 7.3.1. Russia 7.3.2. Poland 7.3.3. Rest of Eastern Europe 7.4. Market Size –Value (US$ Mn) and Forecast By Country, 2017-2027 7.4.1. Russia 7.4.2. Poland 7.4.3. Rest of Eastern Europe 7.5. Market Size - Value (US$ Mn) and Forecast By Technology 7.5.1. 4H SiC MOSFET 7.5.2. HEMT 7.5.3. Others 7.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material 7.6.1. GaN SiC 7.6.2. GaN Si 7.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size 7.7.1. Less than 150 mm 7.7.2. 150 mm-500 mm 7.7.3. More than 500 mm 7.8. Market Size –Value (US$ Mn) and Forecast By Industry 7.8.1. Consumer Electronics 7.8.2. Energy & Utilities 7.8.3. Automotive 7.8.4. IT & Telecom 7.8.5. Others 7.9. Drivers and Restraints: Impact Analysis 7.10. Market Attractiveness Analysis 7.10.1. By Country 7.10.2. By Technology 7.10.3. By Wafer Material 7.10.4. By Wafer Size 7.10.5. By Industry 7.11. Key Representative Market Participants 7.12. Market Presence (Intensity Map) 8. Latin America GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027 8.1. Introduction 8.2. Regional Market Dynamics 8.2.1. Drivers 8.2.2. Restraints 8.2.3. Trends 8.3. Market Size –Value (US$ Mn) By Country, 2012-2016 8.3.1. Brazil 8.3.2. Mexico 8.3.3. Rest of Latin America 8.4. Market Size –Value (US$ Mn) and Forecast By Country, 2017-2027 8.4.1. Brazil 8.4.2. Mexico 8.4.3. Rest of Latin America 8.5. Market Size - Value (US$ Mn) and Forecast By Technology 8.5.1. 4H SiC MOSFET 8.5.2. HEMT 8.5.3. Others 8.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material 8.6.1. GaN SiC 8.6.2. GaN Si 8.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size 8.7.1. Less than 150 mm 8.7.2. 150 mm-500 mm 8.7.3. More than 500 mm 8.8. Market Size –Value (US$ Mn) and Forecast By Industry 8.8.1. Consumer Electronics 8.8.2. Energy & Utilities 8.8.3. Automotive 8.8.4. IT & Telecom 8.8.5. Others 8.9. Drivers and Restraints: Impact Analysis 8.10. Market Attractiveness Analysis 8.10.1. By Country 8.10.2. By Technology 8.10.3. By Wafer Material 8.10.4. By Wafer Size 8.10.5. By Industry 8.11. Key Representative Market Participants 8.12. Market Presence (Intensity Map) 9. Asia Pacific Excluding Japan (APEJ) GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027 9.1. Introduction 9.2. Regional Market Dynamics 9.2.1. Drivers 9.2.2. Restraints 9.2.3. Trends 9.3. Market Size – Value (US$ Mn) By Country, 2012-2016 9.3.1. China 9.3.2. India 9.3.3. Australia and New Zealand 9.3.4. ASEAN 9.3.5. Rest of APEJ 9.4. Market Size – Value (US$ Mn) and Forecast By Country, 2017-2027 9.4.1. China 9.4.2. India 9.4.3. Australia and New Zealand 9.4.4. ASEAN 9.4.5. Rest of APEJ 9.5. Market Size - Value (US$ Mn) and Forecast By Technology 9.5.1. 4H SiC MOSFET 9.5.2. HEMT 9.5.3. Others 9.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material 9.6.1. GaN SiC 9.6.2. GaN Si 9.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size 9.7.1. Less than 150 mm 9.7.2. 150 mm-500 mm 9.7.3. More than 500 mm 9.8. Market Size –Value (US$ Mn) and Forecast By Industry 9.8.1. Consumer Electronics 9.8.2. Energy & Utilities 9.8.3. Automotive 9.8.4. IT & Telecom 9.8.5. Others 9.9. Drivers and Restraints: Impact Analysis 9.10. Market Attractiveness Analysis 9.10.1. By Country 9.10.2. By Technology 9.10.3. By Wafer Material 9.10.4. By Wafer Size 9.10.5. By Industry 9.11. Key Representative Market Participants 9.12. Market Presence (Intensity Map) 10. Japan GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027 10.1. Introduction 10.2. Regional Market Dynamics 10.2.1. Drivers 10.2.2. Restraints 10.2.3. Trends 10.3. Market Size - Value (US$ Mn) and Forecast By Technology 10.3.1. 4H SiC MOSFET 10.3.2. HEMT 10.3.3. Others 10.4. Market Size - Value (US$ Mn) and Forecast By Wafer Material 10.4.1. GaN SiC 10.4.2. GaN Si 10.5. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size 10.5.1. Less than 150 mm 10.5.2. 150 mm-500 mm 10.5.3. More than 500 mm 10.6. Market Size –Value (US$ Mn) and Forecast By Industry 10.6.1. Consumer Electronics 10.6.2. Energy & Utilities 10.6.3. Automotive 10.6.4. IT & Telecom 10.6.5. Others 10.7. Drivers and Restraints: Impact Analysis 10.8. Market Attractiveness Analysis 10.8.1. By Country 10.8.2. By Technology 10.8.3. By Wafer Material 10.8.4. By Wafer Size 10.8.5. By Industry 10.9. Key Representative Market Participants 10.10. Market Presence (Intensity Map) 11. Middle East and Africa GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027 11.1. Introduction 11.2. Regional Market Dynamics 11.2.1. Drivers 11.2.2. Restraints 11.2.3. Trends 11.3. Market Size – Value (US$ Mn) By Country, 2012-2016 11.3.1. GCC Countries 11.3.2. Turkey 11.3.3. Northern Africa 11.3.4. South Africa 11.3.5. Rest of MEA 11.4. Market Size – Value (US$ Mn) and Forecast By Country, 2017-2027 11.4.1. GCC Countries 11.4.2. Turkey 11.4.3. Northern Africa 11.4.4. South Africa 11.4.5. Rest of MEA 11.5. Market Size - Value (US$ Mn) and Forecast By Technology 11.5.1. 4H SiC MOSFET 11.5.2. HEMT 11.5.3. Others 11.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material 11.6.1. GaN SiC 11.6.2. GaN Si 11.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size 11.7.1. Less than 150 mm 11.7.2. 150 mm-500 mm 11.7.3. More than 500 mm 11.8. Market Size –Value (US$ Mn) and Forecast By Industry 11.8.1. Consumer Electronics 11.8.2. Energy & Utilities 11.8.3. Automotive 11.8.4. IT & Telecom 11.8.5. Others 11.9. Drivers and Restraints: Impact Analysis 11.10. Market Attractiveness Analysis 11.10.1. By Country 11.10.2. By Technology 11.10.3. By Wafer Material 11.10.4. By Wafer Size 11.10.5. By Industry 11.11. Key Representative Market Participants 11.12. Market Presence (Intensity Map) 12. Forecast Factors: Relevance and Impact 13. Forecast Assumptions 14. Competition Landscape 14.1. Market Structure 14.2. Market Share Analysis 14.3. Competition Intensity Mapping By Market Taxonomy 14.4. Competition Dashboard 14.5. Company Profiles (Details – Overview, Financials, Strategy, Recent Developments) 14.5.1. Qorvo, Inc. 14.5.2. NXP Semiconductors N.V. 14.5.3. Infineon Technologies AG 14.5.4. Panasonic Corporation 14.5.5. Toshiba Corporation 14.5.6. Texas Instruments Incorporated 14.5.7. GaN Systems Inc. 14.5.8. Efficient Power Conversion Corporation 14.5.9. Wolfspeed, Inc 14.5.10. Transphorm Inc., 14.6. Other Players (Snapshot) 14.6.1. STMicroelectronics 14.6.2. AIXTRON SE 14.6.3. IQE PLC 14.6.4. EXAGAN 14.6.5. POWDEC 15. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027 15.1. Introduction / Key Findings 15.2. Market Size –Value (US$ Mn) and Forecast By Region 15.2.1. North America 15.2.2. Western Europe 15.2.3. Eastern Europe 15.2.4. Latin America 15.2.5. Asia Pacific Excluding Japan 15.2.6. Japan 15.2.7. Middle East and Africa 15.3. Market Attractiveness Analysis By Region 16. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Technology 16.1. Introduction 16.2. Market Size –Value (US$ Mn) and Forecast By Technology 16.2.1. 4H-SiC MOSFET 16.2.2. HEMT 16.2.3. Others 16.3. Key Trends / Developments 16.4. Market Attractiveness Analysis By Technology 17. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Wafer Material 17.1. Introduction / Key Findings 17.2. Market Size –Value (US$ Mn) and Forecast By Wafer Material 17.2.1. GaN SiC 17.2.2. GaN Si 17.3. Key Trends / Developments 17.4. Market Attractiveness Analysis By Wafer Material 18. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Wafer Size 18.1. Introduction / Key Findings 18.2. Market Size – Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size 18.2.1. Less than 150 mm 18.2.2. 150 mm-500 mm 18.2.3. More than 500 mm 18.3. Key Trends / Developments 18.4. Market Attractiveness Analysis By Wafer Size 19. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Industry 19.1. Introduction / Key Findings 19.2. Market Size Value (US$ Mn) and Forecast By Industry 19.2.1. Consumer Electronics 19.2.2. Energy & Utilities 19.2.3. Automotive 19.2.4. IT & Telecom 19.2.5. Others 19.3. Key Trends / Developments 19.4. Market Attractiveness Analysis By Industry 20. Assumptions & Acronyms 21. Research Methodology
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GaN Power Devices Market
