The Japanese electronics industry is one of the largest consumer electronics industries in the world. With a large revenue share, demand for semiconductors is high and GaN power devices being compact, efficient and with low capacitance, result in minimising energy losses during charging and discharging. This is likely to encourage demand in the market and subsequently drive overall market growth.
GaN is widely used in transistors and due to its enhanced properties such as high thermal conductivity, high voltage potential and large critical fields, these devices offer high switching frequencies and high power density enabling transistors to operate at high voltage levels. These transistors have applications in various fields and provide good results, which is another factor driving market growth.
For instance, in Jan 2016, Fujitsu Limited, which is a Japan based IT equipment manufacturing company, developed a GaN high-electron mobility transistor power amplifier with the world’s highest output performance for wideband wireless transmissions, which was 1.8X greater than before, enabling over 30% greater range for a high-speed wireless network.
Increasing research and development initiatives in GaN substrate is also responsible for the growth of the Japan GaN power devices market. Due to features of GaN technology such as high breakdown voltage, high switching frequency and miniaturisation, demand for GaN power devices has been increasing and continuous research is being done by research centres in Japan in order to determine and increase efficiencies of GaN.
For example, a few years ago, a team of researchers from the Institute of Industrial Science at the University of Tokyo developed a new technology for creating GaN LEDs on the glass substrate. With the help of this development, manufacturing costs can be cut down along with actualising OLED light panels.
Don't pay for what you don't need
Customize your report by selecting specific countries or regions and save 30%!
One of the factors hampering the growth of the Gallium Nitride power devices market is the shrinking path of semiconductor power devices. With increasing high current density in GaN devices, problems related to existing assembly and interconnect technologies are increasing. The major problems include low impedance interconnects, higher thermal resistance and lower thermal capacitance per chip demanding higher chip temperature and better thermal interconnects.
The need to handle higher current densities per package and the same heat flow coming from smaller footprints to be removed from the ambient environment is also growing. These factors continue to remain a challenge for the GaN power devices market in Japan.
In terms of value, the Japan GaN power devices market registered a CAGR of 17.8% from 2012–2016 and is expected to exhibit a CAGR of 23.1% from 2017–2027. In 2017, the Japan GaN power devices market is expected to be valued at more than US$ 100 Mn and is projected to reach more than US$ 800 Mn by the end of 2027. The GaN power devices market in Japan is expected to represent incremental opportunity of a little more than US$ 700 Mn between 2017 and 2027.
The Japan regional market is projected to be the most attractive market in the global GaN power devices market during the forecast period in terms of value. However, in terms of year on year growth, the Latin America GaN power devices market will register high Y-o-Y growth rates throughout the forecast period.
Principal Consultant
By Technology
By Wafer Material
By Wafer Size
By Industry
By Region
Get the data you need at a Fraction of the cost
Personalize your report by choosing insights you need
and save 40%!
The global GaN power is expected to display a CAGR of 24% during the forecast period
The global GaN power devices market is projected to secure US$ 1.88 Billion in 2022
The known players in the global GaN power devices market include Cree, Inc., GaN Systems, Qorvo, Inc., and Toshiba Corporation, among others.
1. Executive Summary
1.1. Market Overview
1.2. Market Analysis
1.3. FMI Analysis and Recommendations
2. Market Introduction
2.1. Market Taxonomy
2.2. Market Definition
3. Market View Point
3.1. Macro-Economic Factors
3.2. Opportunity Analysis
4. Global Market Analysis 2012–2016 and Forecast 2017–2027
4.1. Market Volume Projections
4.2. Market Size and Y-o-Y Growth
4.3. Absolute $ Opportunity
4.4. Value Chain
5. North America GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027
5.1. Introduction
5.2. Regional Market Dynamics
5.2.1. Drivers
5.2.2. Restraints
5.2.3. Trends
5.3. Market Size –Value (US$ Mn) By Country, 2012-2016
5.3.1. U.S.
5.3.2. Canada
5.4. Market Size - Value (US$ Mn) and Forecast By Country, 2017-2027
5.4.1. U.S.
5.4.2. Canada
5.5. Market Size - Value (US$ Mn) and Forecast By Technology
5.5.1. 4H SiC MOSFET
5.5.2. HEMT
5.5.3. Others
5.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material
5.6.1. GaN SiC
5.6.2. GaN Si
5.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size
5.7.1. Less than 150 mm
5.7.2. 150 mm-500 mm
5.7.3. More than 500 mm
5.8. Market Size –Value (US$ Mn) and Forecast By Industry
5.8.1. Consumer Electronics
5.8.2. Energy & Utilities
5.8.3. Automotive
5.8.4. IT & Telecom
5.8.5. Others
5.9. Drivers and Restraints: Impact Analysis
5.10. Market Attractiveness Analysis
5.10.1. By Country
5.10.2. By Technology
5.10.3. By Wafer Material
5.10.4. By Wafer Size
5.10.5. By Industry
5.11. Key Representative Market Participants
5.12. Market Presence (Intensity Map)
6. Western Europe GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027
6.1. Introduction
6.2. Regional Market Dynamics
6.2.1. Drivers
6.2.2. Restraints
6.2.3. Trends
6.3. Market Size –Value (US$ Mn) By Country, 2012-2016
6.3.1. Germany
6.3.2. France
6.3.3. U.K.
6.3.4. Spain
6.3.5. Italy
6.3.6. BENELUX
6.3.7. Nordic
6.3.8. Rest of Western Europe
6.4. Market Size –Value (US$ Mn) and Forecast By Country, 2017-2027
6.4.1. Germany
6.4.2. France
6.4.3. U.K.
6.4.4. Spain
6.4.5. Italy
6.4.6. BENELUX
6.4.7. Nordic
6.4.8. Rest of Western Europe
6.5. Market Size - Value (US$ Mn) and Forecast By Technology
6.5.1. 4H SiC MOSFET
6.5.2. HEMT
6.5.3. Others
6.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material
6.6.1. GaN SiC
6.6.2. GaN Si
6.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size
6.7.1. Less than 150 mm
6.7.2. 150 mm-500 mm
6.7.3. More than 500 mm
6.8. Market Size –Value (US$ Mn) and Forecast By Industry
6.8.1. Consumer Electronics
6.8.2. Energy & Utilities
6.8.3. Automotive
6.8.4. IT & Telecom
6.8.5. Others
6.9. Drivers and Restraints: Impact Analysis
6.10. Market Attractiveness Analysis
6.10.1. By Country
6.10.2. By Technology
6.10.3. By Wafer Material
6.10.4. By Wafer Size
6.10.5. By Industry
6.11. Key Representative Market Participants
6.12. Market Presence (Intensity Map)
7. Eastern Europe GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027
7.1. Introduction
7.2. Regional Market Dynamics
7.2.1. Drivers
7.2.2. Restraints
7.2.3. Trends
7.3. Market Size –Value (US$ Mn) By Country, 2012-2016
7.3.1. Russia
7.3.2. Poland
7.3.3. Rest of Eastern Europe
7.4. Market Size –Value (US$ Mn) and Forecast By Country, 2017-2027
7.4.1. Russia
7.4.2. Poland
7.4.3. Rest of Eastern Europe
7.5. Market Size - Value (US$ Mn) and Forecast By Technology
7.5.1. 4H SiC MOSFET
7.5.2. HEMT
7.5.3. Others
7.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material
7.6.1. GaN SiC
7.6.2. GaN Si
7.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size
7.7.1. Less than 150 mm
7.7.2. 150 mm-500 mm
7.7.3. More than 500 mm
7.8. Market Size –Value (US$ Mn) and Forecast By Industry
7.8.1. Consumer Electronics
7.8.2. Energy & Utilities
7.8.3. Automotive
7.8.4. IT & Telecom
7.8.5. Others
7.9. Drivers and Restraints: Impact Analysis
7.10. Market Attractiveness Analysis
7.10.1. By Country
7.10.2. By Technology
7.10.3. By Wafer Material
7.10.4. By Wafer Size
7.10.5. By Industry
7.11. Key Representative Market Participants
7.12. Market Presence (Intensity Map)
8. Latin America GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027
8.1. Introduction
8.2. Regional Market Dynamics
8.2.1. Drivers
8.2.2. Restraints
8.2.3. Trends
8.3. Market Size –Value (US$ Mn) By Country, 2012-2016
8.3.1. Brazil
8.3.2. Mexico
8.3.3. Rest of Latin America
8.4. Market Size –Value (US$ Mn) and Forecast By Country, 2017-2027
8.4.1. Brazil
8.4.2. Mexico
8.4.3. Rest of Latin America
8.5. Market Size - Value (US$ Mn) and Forecast By Technology
8.5.1. 4H SiC MOSFET
8.5.2. HEMT
8.5.3. Others
8.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material
8.6.1. GaN SiC
8.6.2. GaN Si
8.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size
8.7.1. Less than 150 mm
8.7.2. 150 mm-500 mm
8.7.3. More than 500 mm
8.8. Market Size –Value (US$ Mn) and Forecast By Industry
8.8.1. Consumer Electronics
8.8.2. Energy & Utilities
8.8.3. Automotive
8.8.4. IT & Telecom
8.8.5. Others
8.9. Drivers and Restraints: Impact Analysis
8.10. Market Attractiveness Analysis
8.10.1. By Country
8.10.2. By Technology
8.10.3. By Wafer Material
8.10.4. By Wafer Size
8.10.5. By Industry
8.11. Key Representative Market Participants
8.12. Market Presence (Intensity Map)
9. Asia Pacific Excluding Japan (APEJ) GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027
9.1. Introduction
9.2. Regional Market Dynamics
9.2.1. Drivers
9.2.2. Restraints
9.2.3. Trends
9.3. Market Size – Value (US$ Mn) By Country, 2012-2016
9.3.1. China
9.3.2. India
9.3.3. Australia and New Zealand
9.3.4. ASEAN
9.3.5. Rest of APEJ
9.4. Market Size – Value (US$ Mn) and Forecast By Country, 2017-2027
9.4.1. China
9.4.2. India
9.4.3. Australia and New Zealand
9.4.4. ASEAN
9.4.5. Rest of APEJ
9.5. Market Size - Value (US$ Mn) and Forecast By Technology
9.5.1. 4H SiC MOSFET
9.5.2. HEMT
9.5.3. Others
9.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material
9.6.1. GaN SiC
9.6.2. GaN Si
9.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size
9.7.1. Less than 150 mm
9.7.2. 150 mm-500 mm
9.7.3. More than 500 mm
9.8. Market Size –Value (US$ Mn) and Forecast By Industry
9.8.1. Consumer Electronics
9.8.2. Energy & Utilities
9.8.3. Automotive
9.8.4. IT & Telecom
9.8.5. Others
9.9. Drivers and Restraints: Impact Analysis
9.10. Market Attractiveness Analysis
9.10.1. By Country
9.10.2. By Technology
9.10.3. By Wafer Material
9.10.4. By Wafer Size
9.10.5. By Industry
9.11. Key Representative Market Participants
9.12. Market Presence (Intensity Map)
10. Japan GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027
10.1. Introduction
10.2. Regional Market Dynamics
10.2.1. Drivers
10.2.2. Restraints
10.2.3. Trends
10.3. Market Size - Value (US$ Mn) and Forecast By Technology
10.3.1. 4H SiC MOSFET
10.3.2. HEMT
10.3.3. Others
10.4. Market Size - Value (US$ Mn) and Forecast By Wafer Material
10.4.1. GaN SiC
10.4.2. GaN Si
10.5. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size
10.5.1. Less than 150 mm
10.5.2. 150 mm-500 mm
10.5.3. More than 500 mm
10.6. Market Size –Value (US$ Mn) and Forecast By Industry
10.6.1. Consumer Electronics
10.6.2. Energy & Utilities
10.6.3. Automotive
10.6.4. IT & Telecom
10.6.5. Others
10.7. Drivers and Restraints: Impact Analysis
10.8. Market Attractiveness Analysis
10.8.1. By Country
10.8.2. By Technology
10.8.3. By Wafer Material
10.8.4. By Wafer Size
10.8.5. By Industry
10.9. Key Representative Market Participants
10.10. Market Presence (Intensity Map)
11. Middle East and Africa GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027
11.1. Introduction
11.2. Regional Market Dynamics
11.2.1. Drivers
11.2.2. Restraints
11.2.3. Trends
11.3. Market Size – Value (US$ Mn) By Country, 2012-2016
11.3.1. GCC Countries
11.3.2. Turkey
11.3.3. Northern Africa
11.3.4. South Africa
11.3.5. Rest of MEA
11.4. Market Size – Value (US$ Mn) and Forecast By Country, 2017-2027
11.4.1. GCC Countries
11.4.2. Turkey
11.4.3. Northern Africa
11.4.4. South Africa
11.4.5. Rest of MEA
11.5. Market Size - Value (US$ Mn) and Forecast By Technology
11.5.1. 4H SiC MOSFET
11.5.2. HEMT
11.5.3. Others
11.6. Market Size - Value (US$ Mn) and Forecast By Wafer Material
11.6.1. GaN SiC
11.6.2. GaN Si
11.7. Market Size - Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size
11.7.1. Less than 150 mm
11.7.2. 150 mm-500 mm
11.7.3. More than 500 mm
11.8. Market Size –Value (US$ Mn) and Forecast By Industry
11.8.1. Consumer Electronics
11.8.2. Energy & Utilities
11.8.3. Automotive
11.8.4. IT & Telecom
11.8.5. Others
11.9. Drivers and Restraints: Impact Analysis
11.10. Market Attractiveness Analysis
11.10.1. By Country
11.10.2. By Technology
11.10.3. By Wafer Material
11.10.4. By Wafer Size
11.10.5. By Industry
11.11. Key Representative Market Participants
11.12. Market Presence (Intensity Map)
12. Forecast Factors: Relevance and Impact
13. Forecast Assumptions
14. Competition Landscape
14.1. Market Structure
14.2. Market Share Analysis
14.3. Competition Intensity Mapping By Market Taxonomy
14.4. Competition Dashboard
14.5. Company Profiles (Details – Overview, Financials, Strategy, Recent Developments)
14.5.1. Qorvo, Inc.
14.5.2. NXP Semiconductors N.V.
14.5.3. Infineon Technologies AG
14.5.4. Panasonic Corporation
14.5.5. Toshiba Corporation
14.5.6. Texas Instruments Incorporated
14.5.7. GaN Systems Inc.
14.5.8. Efficient Power Conversion Corporation
14.5.9. Wolfspeed, Inc
14.5.10. Transphorm Inc.,
14.6. Other Players (Snapshot)
14.6.1. STMicroelectronics
14.6.2. AIXTRON SE
14.6.3. IQE PLC
14.6.4. EXAGAN
14.6.5. POWDEC
15. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027
15.1. Introduction / Key Findings
15.2. Market Size –Value (US$ Mn) and Forecast By Region
15.2.1. North America
15.2.2. Western Europe
15.2.3. Eastern Europe
15.2.4. Latin America
15.2.5. Asia Pacific Excluding Japan
15.2.6. Japan
15.2.7. Middle East and Africa
15.3. Market Attractiveness Analysis By Region
16. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Technology
16.1. Introduction
16.2. Market Size –Value (US$ Mn) and Forecast By Technology
16.2.1. 4H-SiC MOSFET
16.2.2. HEMT
16.2.3. Others
16.3. Key Trends / Developments
16.4. Market Attractiveness Analysis By Technology
17. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Wafer Material
17.1. Introduction / Key Findings
17.2. Market Size –Value (US$ Mn) and Forecast By Wafer Material
17.2.1. GaN SiC
17.2.2. GaN Si
17.3. Key Trends / Developments
17.4. Market Attractiveness Analysis By Wafer Material
18. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Wafer Size
18.1. Introduction / Key Findings
18.2. Market Size – Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size
18.2.1. Less than 150 mm
18.2.2. 150 mm-500 mm
18.2.3. More than 500 mm
18.3. Key Trends / Developments
18.4. Market Attractiveness Analysis By Wafer Size
19. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Industry
19.1. Introduction / Key Findings
19.2. Market Size Value (US$ Mn) and Forecast By Industry
19.2.1. Consumer Electronics
19.2.2. Energy & Utilities
19.2.3. Automotive
19.2.4. IT & Telecom
19.2.5. Others
19.3. Key Trends / Developments
19.4. Market Attractiveness Analysis By Industry
20. Assumptions & Acronyms
21. Research Methodology
Explore Technology Insights
View Reports
GaN Power Devices Market
